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| (R) 2N2219A 2N2222A HIGH SPEED SWITCHES PRELIMINARY DATA DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltage. TO-18 TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM P tot Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Total Dissipation at T amb 25 o C for 2N2219A for 2N2222A at T C 25 o C for 2N2219A for 2N2222A Storage Temperature Max. Operating Junction Temperature Value 75 40 6 0.6 0.8 0.8 0.5 3 1.8 -65 to 175 175 Unit V V V A A W W W W o o T stg Tj C C 1/7 February 2003 2N2219A / 2N2222A THERMAL DATA TO-39 R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 50 187.5 TO-18 83.3 300 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I CEX I BEX I EBO V (BR)CBO Parameter Collector Cut-off Current (I E = 0) Collector Cut-off Current (V BE = -3V) Base Cut-off Current (V BE = -3V) Emitter Cut-off Current (I C = 0) Collector-Base Breakdown Voltage (I E = 0) Test Conditions V CB = 60 V V CB = 60 V V CE = 60 V V CE = 60 V V EB = 3 V I C = 10 A 75 T j = 150 o C Min. Typ. Max. 10 10 10 20 10 Unit nA A nA nA nA V V (BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain I C = 10 mA 40 V I E = 10 A 6 V V CE(sat) V BE(sat) h FE I C = 150 mA I C = 500 mA I C = 150 mA I C = 500 mA I B = 15 mA I B = 50 mA I B = 15 mA I B = 50 mA 0.6 35 50 75 100 40 50 35 f = 1KHz f = 1KHz 50 75 300 0.3 1 1.2 2 V V V V I C = 0.1 mA V CE = 10 V I C = 1 mA V CE = 10 V I C = 10 mA V CE = 10 V I C = 150 mA V CE = 10 V I C = 500 mA V CE = 10 V I C = 150 mA V CE = 1 V I C = 10 mA V CE = 10 V T amb = -55 o C I C = 1 mA I C = 10 mA I C = 20 mA f = 100 MHz IC = 0 IE = 0 V CE = 10 V V CE = 10 V V CE = 20 V f = 100KHz f = 100 KHz 300 hfe fT C EBO C CBO R e(hie) Small Signal Current Gain Transition Frequency Emitter-Base Capacitance Collector-Base Capacitance Real Part of Input Impedance 300 375 MHz 25 8 60 pF pF V EB = 0.5 V VCB = 10 V I C = 20 mA f = 300MHz V CE = 20 V * Pulsed: Pulse duration = 300 s, duty cycle 1 % 2/7 2N2219A / 2N2222A ELECTRICAL CHARACTERISTICS (continued) Symbol NF hie h re h oe t d t r t s t f r bb' C b'c Parameter Noise Figure Input Impedance Reverse Voltage Ratio Output Admittance Delay Time Rise Time Storage Time Fall Time Feedback Time Constant Test Conditions I C = 0.1 mA V CE = 10 V f = 1KHz R g = 1K I C = 1 mA I C = 10 mA I C = 1 mA I C = 10 mA I C = 1 mA I C = 10 mA V CC = 30 V I B1 = 15 mA V CC = 30 V I B1 = 15 mA V CE = 10 V V CE = 10 V V CE = 10 V V CE = 10 V V CE = 10 V V CE = 10 V I C = 150 mA V BB = -0.5 V I C = 150 mA V BB = -0.5 V 5 25 2 0.25 Min. Typ. 4 8 1.25 8 4 35 200 10 25 225 60 150 Max. Unit dB k k 10 -4 -4 10 S S ns ns ns ns ps V CC = 30 V I C = 150 mA I B1 = -IB2 = 15 mA V CC = 30 V I C = 150 mA I B1 = -IB2 = 15 mA I C = 20 mA V CE = 20 V f = 31.8MHz Pulsed: Pulse duration = 300 s, duty cycle 1 % See test circuit 3/7 2N2219A / 2N2222A Test Circuit fot td, tr. PULSE GENERATOR : tr 20 ns PW 200 ns ZIN = 50 TO OSCILLOSCOPE tr 5.0 ns ZIN < 100 K CIN 12 pF Test Circuit fot td, tr. PULSE GENERATOR : PW 10 s ZIN = 50 TC 5.0 ns TO OSCILLOSCOPE : tr < 5.0 ns ZIN > 100 K CIN 12 pF 4/7 2N2219A / 2N2222A TO-18 MECHANICAL DATA mm DIM. MIN. A B D E F G H I L 45o 2.54 1.2 1.16 45o TYP. 12.7 0.49 5.3 4.9 5.8 0.100 0.047 0.045 MAX. MIN. TYP. 0.500 0.019 0.208 0.193 0.228 MAX. inch G I H E F D A L C B 0016043 5/7 2N2219A / 2N2222A TO-39 MECHANICAL DATA mm DIM. MIN. A B D E F G H I L 5.08 1.2 0.9 45o (typ.) 12.7 0.49 6.6 8.5 9.4 0.200 0.047 0.035 TYP. MAX. MIN. 0.500 0.019 0.260 0.334 0.370 TYP. MAX. inch G I H D A L F E B P008B 6/7 2N2219A / 2N2222A Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7 |
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